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24C32AP 03515 43025 03515 05E41 MOC2R60 OP11307 FN3229
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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1441
DESCRIPTION *With TO-3PN package *Built-in damper diode *High voltage ,high reliability *High speed switching *Wide area of safe operation APPLICATIONS *For horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 4 15 3.5 70 130 -55~130 UNIT V V A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Storage time Fall time Diode forward voltage CONDITIONS IE=500mA; IC=0 IC=3A; IB=1A IC=3A; IB=1A VCB=750V; IE=0 VCB=1500V; IE=0 IC=3A ; VCE=10V 5 4 MIN 5
2SD1441
SYMBOL V(BR)EBO VCEsat VBEsat ICBO ICBO hFE ts tf VF
TYP.
MAX
UNIT V
1.0 1.5 50 1 15 9 0.8 2.2
V V A mA
IC=3A IBend=1A,LLeak=5H
s s V
IF=-4A,IB=0
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1441
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3


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